| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | 8-PowerTDFN |
| Polarity | N-Channel |
| Power Dissipation | 3.00 W |
| Drain to Source Voltage (Vds) | 25.0 V |
| Continuous Drain Current (Ids) | 60.0 A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Reel |
This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.
● Optimized for 5 V Gate Drive
● Resistance Rated at VGS =2.5 V
● Ultra-Low Qg and Qgd
● Low Thermal Resistance
● Avalanche Rated
● Pb Free Terminal Plating
● RoHS Compliant
● Halogen Free
● SON 3.3-mm × 3.3-mm Plastic
●Package
● APPLICATIONS
● Point of Load Synchronous
●Buck Converter for Applications
●in Networking, Telecom, and
●Computing Systems
● Optimized for Control
●or Synchronous FET
●Applications
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