| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220FP |
| Polarity | NPN |
| Power Dissipation | 30.0 W |
| Breakdown Voltage (Collector to Emitter) | 450V |
| Continuous Collector Current | 4A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The BUL1102EFP is a NPN fast-switching Power Transistor manufactured in Multi Epitaxial Planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. It has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
● High voltage capability
● Very high switching speed
ST Microelectronics
13 Pages / 0.38 MByte
ST Microelectronics
20 Pages / 2.6 MByte
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