| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 350 V |
| Current Rating | 15.0 A |
| Case/Package | D2PAK |
| Polarity | NPN |
| Power Dissipation | 150 W |
| Breakdown Voltage (Collector to Base) | 5.00 V |
| Breakdown Voltage (Collector to Emitter) | 350V |
| Continuous Collector Current | 15A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
Compared to other transistors, the NPN BUB941ZTT4 Darlington transistor from STMicroelectronics can provide you with a higher current gain value. This product"s maximum continuous DC collector current is 15 A, while its minimum DC current gain is 300@5A@10 V. It has a maximum collector emitter saturation voltage of 1.8@100mA@8A|1.8@250mA@10A V. This Darlington transistor array"s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 2.2@100mA@8A|2.5@250mA@10A V. Its maximum power dissipation is 150000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 175 °C.
ST Microelectronics
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