| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 350 V |
| Current Rating | 15.0 A |
| Case/Package | TO-220 |
| Polarity | NPN, N-Channel |
| Breakdown Voltage (Collector to Emitter) | 350V |
| Continuous Collector Current | 15A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
STMicroelectronics brings you their latest NPN BU941ZT Darlington transistor, a component that can easily provide you with much higher current gain values. This Darlington transistor array"s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 2.2@100mA@8A|2.5@250mA@10A V. This product"s maximum continuous DC collector current is 15 A, while its minimum DC current gain is 300@5A@10 V. It has a maximum collector emitter saturation voltage of 1.8@100mA@8A|1.8@250mA@10A V. Its maximum power dissipation is 150000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 175 °C.
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