| TYPE | DESCRIPTION |
|---|
| Number of Pins | 8 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Power Dissipation | 66.0 W |
| Drain to Source Voltage (Vds) | 80V |
| Continuous Drain Current (Ids) | 10A |
The BSZ123N08NS3 G is a 80V N-channel Power MOSFET that offers highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). The OptiMOS™ MOSFET offers industry"s lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
● Dual sided cooling
● Low parasitic inductance
● Low profile (<0.7mm)
● Reduced switching and conduction losses
● Superior thermal resistance
Infineon
9 Pages / 0.46 MByte
Infineon
Trans MOSFET N-CH 80V 10A 8Pin TSDSON EP
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