| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | TSDSON-8 |
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | 30V |
| Continuous Drain Current (Ids) | 13.5A |
The BSZ086P03NS3E G is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.
● Enhancement-mode
● Avalanche rated
● Qualified to JEDEC for target applications
● ESD Protected
● Green device
Infineon
9 Pages / 0.53 MByte
Infineon
Trans MOSFET P-CH 30V 13.5A 8Pin TSDSON EP T/R
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Optimostm P3 Power Transistor Power Mosfet
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Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
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