| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 100 V |
| Current Rating | 170 mA |
| Case/Package | SOT-23 |
| Drain to Source Resistance (on) (Rds) | 6.00 Ω |
| Polarity | N-Channel |
| Power Dissipation | 225 mW |
| Input Capacitance | 20.0 pF |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 170 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Cut Tape (CT) |
N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS100: 0.22A, 100V. RDS(ON)= 6W @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON)= 6W @ VGS = 10V High density cell design for extremely low RDS(ON) Voltage controlled small signal switch. Rugged and reliable.
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