| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 600V |
| Continuous Drain Current (Ids) | 0.12A |
The BSP135 H6327 is a N-channel depletion-mode SIPMOS® Small-Signal-Transistor with 600VDS drain source voltage. Areas of application include power supply start-up power, overvoltage protection, in-rush-current limiter, off-line voltage reference. Also suitable for automotive applications.
● dV/dt rated
● Pb-free lead plating
● Qualified according to AEC Q101
● Halogen-free
Infineon
9 Pages / 0.47 MByte
Infineon
9 Pages / 0.37 MByte
Infineon
Trans MOSFET N-CH 600V 0.12A Automotive 4Pin(3+Tab) SOT-223 T/R
Infineon
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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