The BSC077N12NS3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
● Excellent switching performance
● World"s lowest RDS (ON)
● Very low Qg and Qgd
● Excellent gate charge x RDS (ON) product (FOM)
● MSL1 rated 2
● Environmentally friendly
● Increased efficiency
● Highest power density
● Less paralleling required
● Smallest board-space consumption
● Easy-to-design products
● Qualified according to JEDE for target applications
● Halogen-free, Green device
● Ideal for high-frequency switching and synchronous rectification
● Normal level
