| TYPE | DESCRIPTION |
|---|
| Number of Pins | 8 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 14.9A |
The BSC060N10NS3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.
● Excellent switching performance
● World"s lowest RDS (ON)
● Very low Qg and Qgd
● Excellent gate charge x RDS (ON) product (FOM)
● Environmentally friendly
● Increased efficiency
● Highest power density
● Less paralleling required
● Smallest board-space consumption
● Easy-to-design products
● Halogen-free
● MSL1 rated 2
Infineon
10 Pages / 0.64 MByte
Infineon
5 Pages / 0.28 MByte
Infineon
7 Pages / 0.07 MByte
Infineon
Trans MOSFET N-CH 100V 14.9A 8Pin TDSON EP
Infineon
Power Field-Effect Transistor, 14.9A I(D), 100V, 0.006Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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