| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 80V |
| Continuous Drain Current (Ids) | 18A |
The BSB044N08NN3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.
● Optimized technology for DC-to-DC converters
● Excellent gate charge x RDS (ON) product (FOM)
● Superior thermal resistance
● Dual sided cooling
● Low parasitic inductance
● Low profile
● Normal level
● 100% avalanche tested
● Qualified according to JEDEC for target applications
● Compatible with DirectFET® package MN footprint and outline
● Green device
Infineon
11 Pages / 0.87 MByte
Infineon
MOSFET Transistor, N Channel, 90A, 80V, 0.0037Ω, 10V, 2.8V
Infineon
MOSFET N-CH 80V 18A WDSON-2
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
