| TYPE | DESCRIPTION |
|---|
| Mounting Style | Flange |
| Supply Voltage (DC) | 28.0 V |
| Voltage Rating (DC) | 65.0 V |
| Current Rating | 3.00 A |
| Drain to Source Voltage (Vds) | 65.0 V |
| Breakdown Voltage (Drain to Source) | 65.0 V (min) |
| Continuous Drain Current (Ids) | 3.00 A |
| Output Power | 15.0 W |
| Gain | 13.0 dB |
DESCRIPTION
●Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier
●applications in the VHF frequency range.
●FEATURES
●• High power gain
●• Low noise figure
●• Easy power control
●• Good thermal stability
●• Withstands full load mismatch
●• Gold metallization ensures excellent reliability.
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