Description:
●The BFP720 is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter SOT343 package. The device combines very high gain with lowest noise figure at low operating current for use in a wide range of wireless applications. The BFP720 is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Collector design supports operation voltages from 1.0 V to 4.0 V.
●Summary of Features:
● High performance general purpose wideband LNA transistor
● 150 GHz fT-Silicon Germanium Carbon technology
● Enables Best-In-Class performance for wireless applications due to high dynamic range
● Transistor geometry optimized for low-current applications
● Operation voltage: 1.0 V to 4.0 V
● Very high gain at high frequencies and low current consumption
● 26 dB maximum stable gain at 1.9 GHz and only 13 mA
● 15 dB maximum available gain at 10 GHz and only 13 mA
● Ultra low noise figure from latest SiGe:C technology
● 0.7 dB minimum noise figure at 5.5 GHz and 0.95 dB at 10 GHz
● High linearity OP1dB = +8.5 dBm and OIP3 = +23 dBm at 5.5 GHz and low current consumption of 13 mA
● Pb-free (RoHS compliant) package
