BDX53BG Datasheet PDF - ON Semiconductor

The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.

●Features

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● High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc

● Collector Emitter Sustaining Voltage @ 100 mAdc

●VCEO(sus) = 80 Vdc (Min) BDX53B, 54B

●VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C

● Low Collector-Emitter Saturation Voltage

●VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

●VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc

● Monolithic Construction with Built-In Base-Emitter Shunt Resistors

● TO-220AB Compact Package

● Pb-Free Packages are Available