| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 80.0 V |
| Current Rating | 4.00 A |
| Case/Package | SOT-32 |
| Polarity | NPN |
| Power Dissipation | 40.0 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
● Good hFE linearity
● High fT frequency
● Well-controlled hFE parameter for increased reliability
ST Microelectronics
12 Pages / 0.36 MByte
ST Microelectronics
1 Pages / 0.28 MByte
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