TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-247 |
Polarity | NPN |
Power Dissipation | 125 W |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
The BD249C from Multicomp are through hole, NPN complementary power transistor in TO-247 metal can package. This device is used for switching and amplification.
● Collector emitter voltage (Vce) of 100V
● Continuous collector current (Ic) of 25A
● Power dissipation of 125mW
● Operating junction temperature range from -65°C to 150°C
● Collector emitter saturation voltage of 4V at Ic=25A
● DC current gain of 5 at Ic=25A
Multicomp
5 Pages / 0.18 MByte
Bourns J.W. Miller
NPN SILICON POWER TRANSISTORS
Multicomp
MULTICOMP BD249C Bipolar (BJT) Single Transistor, NPN, 100V, 3MHz, 125W, 25A, 25 hFE
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Bipolar Transistors - BJT 25A 100V 125W NPN
Bourns J.W. Miller
Trans GP BJT NPN 100V 25A 3Pin(3+Tab) SOT-93
Bourns J.W. Miller
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