| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | -3.00 A |
| Case/Package | TO-220 |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 80V |
| Continuous Collector Current | 3A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Do you require a transistor in your circuit operating in the high-voltage range? This PNP BD242BG general purpose bipolar junction transistor, developed by ON Semiconductor, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 40 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
ON Semiconductor
0.15 MByte
ON Semiconductor
6 Pages / 0.09 MByte
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