| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO220AB |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Tube |
This specially engineered PNP BD242B GP BJT from STMicroelectronics comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
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