| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Current Rating | 100 mA |
| Case/Package | SOT-563 |
| Halogen Free Status | Halogen Free |
| Polarity | NPN, PNP |
| Breakdown Voltage (Collector to Emitter) | 50V |
| Continuous Collector Current | 0.1A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
Use this versatile npn and PNP BC847BPDXV6T1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6@NPN|5@PNP V.
ON Semiconductor
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ON Semiconductor
11 Pages / 0.16 MByte
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Dual General Purpose Transistor
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