| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SOT-363 |
| Polarity | NPN+PNP |
| Breakdown Voltage (Collector to Emitter) | 65V |
| Continuous Collector Current | 0.1A |
• For AF input stage and driver applications
●• High current gain
●• Low collector-emitter saturation voltage
●• Two (galvanic) internal isolated NPN/PNP transistor in one package
●• Pb-free (RoHS compliant) package
●• Qualified according AEC Q101
Infineon
10 Pages / 0.1 MByte
Multicomp
Bipolar (BJT) Single Transistor, NPN, 65V, 100MHz, 0.25W(1/4W), 100mA, 110
NXP
Trans GP BJT NPN 65V 0.1A Automotive 3Pin TO-236AB
UTC
SWITCHING AND AMPLIFIER APPLICATIONS
KEC(Korea Electronics)
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)
Rectron Semiconductor
SOT-23 - Power Transistor and Darlingtons
Siemens AG
NPN Silicon AF Transistors
NXP
Trans GP BJT NPN 65V 0.1A 3Pin TO-236AB
NXP
NXP BC846BS Bipolar (BJT) Single Transistor, NPN, 65V, 100MHz, 200mW, 100mA, 200 hFE
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