| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 60V |
| Continuous Drain Current (Ids) | 99A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
The AUIRLR3636 is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
● Advanced process technology
● Logic level gate drive
● Repetitive avalanche allowed up to Tjmax
Infineon
10 Pages / 0.62 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
12 Pages / 0.23 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
7 Pages / 0.17 MByte
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