| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-252AA |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 63A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The AUIRLR3110Z is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
● Advanced process technology
● Logic level gate drive
● Repetitive avalanche allowed up to Tjmax
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