| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-252 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 42A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The AUIRLR2905 is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized design, provides an extremely efficient and reliable operation.
● Advanced planar technology
● Logic level gate drive
● Low ON-resistance
● Dynamic dV/dt rating
● Fully avalanche rating
● Repetitive avalanche allowed up to Tjmax
Infineon
11 Pages / 0.23 MByte
Infineon
3 Pages / 0.36 MByte
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12 Pages / 0.26 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.36 MByte
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