| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-263 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 17A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The AUIRFZ24NS is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
● Advanced planar technology
● Dynamic dV/dt and di/dt capability
● Fully avalanche rating
● Repetitive avalanche allowed up to Tjmax
Infineon
11 Pages / 0.62 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
2 Pages / 0.17 MByte
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