| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 40V |
| Continuous Drain Current (Ids) | 409A |
The AUIRFB8409 is a 40V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
● Advanced process technology
● New ultra low on-resistance
● Repetitive avalanche allowed up to Tjmax
● Automotive qualified
● 175°C Operating temperature
●ESD sensitive device, take proper precaution while handling the device.
Infineon
14 Pages / 0.38 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
2 Pages / 0.12 MByte
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