| TYPE | DESCRIPTION |
|---|
| Case/Package | SOIC |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 5.1A |
The AUIRF7341Q is a 55V dual N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. The automotive MOSFET offers benchmark figure of merit performance and their design optimized to address key applications such as electric power steering, injection, micro hybrid and HEV.
● 175°C Operating temperature
● Fully avalanche rated
● Dynamic dV/dt rating
● Logic level gate drive
● Automotive qualified
●ESD sensitive device, take proper precaution while handling the device.
Infineon
10 Pages / 0.41 MByte
Infineon
2 Pages / 0.07 MByte
Infineon
2 Pages / 0.07 MByte
International Rectifier
Trans MOSFET N-CH 55V 5.1A Automotive 8Pin SOIC T/R
International Rectifier
Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8
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