TYPE | DESCRIPTION |
---|
Number of Pins | 3 Pin |
Case/Package | TO-220AB |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 100V |
Continuous Drain Current (Ids) | 59A |
The AUIRF3710Z is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
● Fully avalanche rating
● Repetitive avalanche allowed up to Tjmax
Infineon
14 Pages / 0.34 MByte
Infineon
2 Pages / 0.03 MByte
Infineon
2 Pages / 0.17 MByte
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