| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 60V |
| Continuous Drain Current (Ids) | 84A |
The AUIRF1010EZ is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
Infineon
15 Pages / 0.36 MByte
Infineon
2 Pages / 0.03 MByte
International Rectifier
Trans MOSFET N-CH 55V 94A Automotive 3Pin(3+Tab) TO-220AB Tube
International Rectifier
Trans MOSFET N-CH 60V 84A Automotive 3Pin(2+Tab) D2PAK Tube
International Rectifier
Trans MOSFET N-CH 55V 94A Automotive 3Pin(2+Tab) D2PAK Tube
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