TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Supply Voltage (DC) | 1.70 V (min) |
Case/Package | SOIC |
Clock Speed | 85.0 MHz |
Memory Size | 1000000 B |
TYPE | DESCRIPTION |
---|
Packaging | Cut Tape (CT) |
The AT45DB081E-SHN-B is a 1.7V minimum, serial-interface sequential access Flash Memory ideally suited for a wide variety of digital voice, image, program code and data storage applications. This also supports the RapidS serial interface for applications requiring very high speed operation. Its 8650752-bit of memory are organized as 4096 pages of 256 or 264 bytes each. In addition to the main memory, the memory also contains two SRAM buffers of 256/264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a systems ability to write a continuous data stream. In addition the SRAM buffers can be used as additional system scratch pad memory and E2 PROM emulation (-bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.
● Continuous read capability through entire array
● Two fully independent SRAM data buffers
● Program and erase suspend/resume
● 100000 Program/erase cycles per page minimum endurance
Adesto Technologies
70 Pages / 2.19 MByte
Adesto Technologies
70 Pages / 2.42 MByte
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