| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247-3 |
| Breakdown Voltage (Drain to Source) | 500 V (min) |
| Output Power | 150 W |
| Gain | 15.0 dB |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
By using a combination of metal-oxide-semiconductor technology, this ARF460BG RF amplifier from Microsemi can be implemented in an electronic circuit as a switching device. Its maximum power dissipation is 250000 mW. Its maximum frequency is 65 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C.
Microsemi
4 Pages / 0.13 MByte
Microsemi
Trans RF MOSFET N-CH 500V 14A 3Pin(3+Tab) TO-247
Microsemi
Trans RF MOSFET N-CH 500V 14A 3Pin(3+Tab) TO-247
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