| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Case/Package | SOT-227 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Don"t be afraid to step up the amps in your device when using this APT75GP120JDQ3 IGBT transistor from Microsemi. Its maximum power dissipation is 543000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single dual emitter configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
Microsemi
9 Pages / 0.44 MByte
Microsemi
40 Pages / 4.07 MByte
Microsemi
Trans IGBT Chip N-CH 1200V 128A 543000mW 4Pin SOT-227
Microsemi
APT75GP120B2G Single 1200V 100A 1042W 320NC POWER MOS 7® IGBT - TO-247-3
Microsemi
Trans IGBT Chip N-CH 1200V 128A 543000mW 4Pin SOT-227
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
