| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 200 A |
| Case/Package | TO-264 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
This APT75GN120LG IGBT transistor from Microsemi is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 833000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Microsemi
6 Pages / 0.39 MByte
Microsemi
6 Pages / 0.39 MByte
Microsemi
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