TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Voltage Rating (DC) | 600 V |
Current Rating | 100 A |
Case/Package | TO-247 |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The APT60GT60BRG IGBT transistor from Microsemi is the best electronic switch for fast switching. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 500000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Microsemi
5 Pages / 0.18 MByte
Microsemi
40 Pages / 4.07 MByte
Microsemi
Trans IGBT Chip N-CH 600V 100A 500000mW 3Pin(3+Tab) TO-247
Microsemi
Trans IGBT Chip N-CH 600V 93A 378000mW 4Pin SOT-227
Microsemi
Trans IGBT Chip N-CH 600V 105A 379000mW 4Pin SOT-227
IXYS Semiconductor
IGBT 600V 100A 500W TO247
Microsemi
Trans IGBT Chip N-CH 600V 93A 378000mW 4Pin SOT-227
ADPOW
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.