| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 600 V |
| Current Rating | 107 A |
| Case/Package | TO-247 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
This APT50GN60BG IGBT transistor from Microsemi is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 366000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
Microsemi
6 Pages / 0.13 MByte
Microsemi
40 Pages / 4.07 MByte
Microsemi
Trans IGBT Chip N-CH 600V 107A 366000mW 3Pin(3+Tab) TO-247
Microsemi
Trans IGBT Chip N-CH 600V 107A 366000mW 3Pin(3+Tab) TO-247
APT
IGBT 600V 107A 366W TO247
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