| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 33.0 A |
| Case/Package | TO-247 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Use the APT33GF120BRG IGBT transistor from Microsemi as an electronic switch. Its maximum power dissipation is 297000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
Microsemi
5 Pages / 0.06 MByte
Microsemi
5 Pages / 1.35 MByte
Microsemi
40 Pages / 4.07 MByte
Microsemi
Trans IGBT Chip N-CH 1200V 64A 357000mW 3Pin(3+Tab) T-MAX
Microsemi
Trans IGBT Chip N-CH 1200V 52A 297000mW 3Pin(3+Tab) TO-247
Microsemi
Trans IGBT Chip N-CH 1200V 64A 357000mW 3Pin(3+Tab) TO-264
Microsemi
Trans IGBT Chip N-CH 1200V 52A 297000mW 3Pin(3+Tab) TO-247
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