| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 600 V |
| Current Rating | 64.0 A |
| Case/Package | TO-247 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
You won"t need to worry about any lagging in your circuit with this APT30GT60BRG IGBT transistor from Microsemi. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
Microsemi
6 Pages / 0.11 MByte
Microsemi
6 Pages / 0.2 MByte
Microsemi
40 Pages / 4.07 MByte
Microsemi
Trans IGBT Chip N-CH 600V 64A 250000mW 3Pin(3+Tab) TO-247
Microsemi
Trans IGBT Chip N-CH 600V 64A 250000mW 3Pin(3+Tab) TO-247
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