| TYPE | DESCRIPTION |
|---|
| Mounting Style | Chassis |
| Case/Package | SOT-227 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
This fast-switching APT200GN60J IGBT transistor from Microsemi will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 682000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
Microsemi
6 Pages / 0.46 MByte
Microsemi
40 Pages / 4.07 MByte
Microsemi
Trans IGBT Chip N-CH 600V 283A 682000mW 3Pin(3+Tab) T-MAX
Microsemi
Trans IGBT Chip N-CH 600V 283A 682000mW 4Pin SOT-227
Microsemi
Trans IGBT Chip N-CH 600V 283A 682000mW 4Pin SOT-227
Microsemi
IGBT 600V 283A 682W SOT227
Microsemi
IGBT 600V 283A 682W SOT227
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