| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 215 A |
| Case/Package | SOT-227 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
This APT150GN120J IGBT transistor from Microsemi is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 625000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration.
Microsemi
6 Pages / 0.43 MByte
Microsemi
44 Pages / 2.7 MByte
Microsemi
40 Pages / 4.07 MByte
Microsemi
Trans IGBT Chip N-CH 1200V 215A 625000mW 4Pin SOT-227
Microsemi
Trans IGBT Chip N-CH 1200V 215A 625000mW 4Pin SOT-227
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