TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 30.0 V |
Current Rating | 1.50 A |
Case/Package | SOT-23 |
Polarity | NPN |
Power Dissipation | 500 mW |
Breakdown Voltage (Collector to Emitter) | 30V |
Continuous Collector Current | 1.5A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Cut Tape (CT) |
The 2STR1230 is a NPN fast-switching Power Transistor manufactured using new "PB-HCD" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
● Very low collector-emitter saturation voltage
● High current gain characteristic
● Fast switching speed
● Surface-mount device in medium power package
● PNP complementary to 2STR2230
ST Microelectronics
9 Pages / 0.16 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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