| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-89 |
| Polarity | NPN |
| Power Dissipation | 1.40 W |
| Breakdown Voltage (Collector to Emitter) | 40V |
| Continuous Collector Current | 3A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Cut Tape (CT) |
Description
●The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
●The complementary PNP is the 2STF2340.
●General features
●■ Very low collector-emitter saturation voltage
●■ High current gain characteristic
●■ Fast switching speed
●■ Miniature SOT-89 plastic package for surface mounting circuits
●■ In compliance with the 2002/93/EC European Directive
●Applications
●■ LED
●■ Motherboard & hard disk drive
●■ Mobile equipment
●■ Battery charger
●■ Voltage regulation
ST Microelectronics
10 Pages / 0.13 MByte
ST Microelectronics
4 Pages / 0.21 MByte
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