| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3P |
| Polarity | NPN |
| Power Dissipation | 130 W |
| Breakdown Voltage (Collector to Emitter) | 230V |
| Continuous Collector Current | 15A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
The 2STC5242 is a 230V High Power NPN Epitaxial Planar Bipolar Transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The transistor shows good gain linearity behaviour. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
● High breakdown voltage
● Complementary to the 2STA1962
● Fast-switching speed
● Well-controlled hFE parameter for increased reliability
ST Microelectronics
9 Pages / 0.17 MByte
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