| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 200 mA |
| Case/Package | TO-92 |
| Drain to Source Resistance (on) (Rds) | 5.00 Ω |
| Polarity | N-Channel |
| Power Dissipation | 400 mW |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 200 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
The 2N7000BU is an advanced small-signal N-channel enhancement-mode MOSFET produced using Fairchild"s proprietary high cell density DMOS technology. It minimizes ON-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. It is particularly suited for low-voltage, low-current applications, such as power MOSFET gate drivers and other switching applications.
● Fast switching times
● Improved inductive ruggedness
● Lower input capacitance
● Extended safe operating area
● Improved high-temperature reliability
Fairchild
7 Pages / 0.1 MByte
Fairchild
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Trans MOSFET N-CH 60V 0.35A 3Pin TO-92 Bag
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Trans MOSFET N-CH 60V 0.2A 3Pin TO-92 Bulk
NTE Electronics
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
Diotec Semiconductor
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, ROHS COMPLIANT, PLASTIC, 10D3, 3Pin
Major Brands
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Motorola
200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-226AA, 3Pin
UTC
TO-92 N-CH 60V 0.115A 7.5Ω
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