2N6387 Datasheet PDF - ON Semiconductor

Plastic Medium-Power Silicon Transistors

●These devices are designed for general-purpose amplifier and low-speed switching applications.

●Features

●• High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc

●• Collector-Emitter Sustaining Voltage - @ 100 mAdc

●   VCEO(sus) = 60 Vdc (Min) - 2N6387

●                 = 80 Vdc (Min) - 2N6388

●• Low Collector-Emitter Saturation Voltage -

●   VCE(sat) = 2.0 Vdc (Max) @ IC

●               = 5.0 Adc - 2N6387, 2N6388

●• Monolithic Construction with Built-In Base-Emitter Shunt Resistors

●• TO-220AB Compact Package

●• Pb-Free Packages are Available