| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Case/Package | TO-3 |
| Polarity | NPN, N-Channel |
| Power Dissipation | 125 W |
| Breakdown Voltage (Collector to Emitter) | 350 V |
The 2N6308 is a 350V Silicon NPN Power Transistor designed for high voltage inverters, switching regulators and line operated amplifier applications. This transistor is especially well suited for switching power supply applications in associated consumer products.
● Low collector-emitter saturation voltage
● Current gain bandwidth (5MHz minimum at Ic = 0.3A)
● Collector-base voltage(Vcbo = 700V)
● Emitter-base voltage(Vebo = 8V)
Multicomp
2 Pages / 0.22 MByte
Multicomp
1 Pages / 0.17 MByte
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