2N6052 Datasheet PDF - ON Semiconductor

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS 150 WATTS

●. . . designed for general−purpose amplifier and low frequency switching applications.

●• High DC Current Gain —

●   hFE = 3500 (Typ) @ IC = 5.0 Adc

●• Collector−Emitter Sustaining Voltage — @ 100 mA

●   VCEO(sus) = 80 Vdc (Min) — 2N6058

●      100 Vdc (Min) — 2N6052, 2N6059

●• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

●• These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative.