2N6034 Datasheet PDF - ON Semiconductor

The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

●Features

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● High DC Current Gain -

●hFE = 2000 (Typ) @ IC = 2.0 Adc

● Collector-Emitter Sustaining Voltage - @ 100 mAdc

●VCEO(sus) = 60 Vdc (Min) - 2N6035, 2N6038

●VCEO(sus) = 80 Vdc (Min) - 2N6036, 2N6039

● Forward Biased Second Breakdown Current Capability

●IS/b = 1.5 Adc @ 25 Vdc

● Monolithic Construction with Built-in Base-Emitter

●Resistors to Limit Leakage Multiplication

● Space-Saving High Performance-to-Cost Ratio

●TO-225AA Plastic Package

● Pb-Free Packages are Available