| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | -25.0 A |
| Case/Package | TO-3 |
| Polarity | PNP, P-Channel |
| Power Dissipation | 200 W |
| Breakdown Voltage (Collector to Emitter) | -80.0 V |
| Continuous Collector Current | 25A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
The 2N5884G is a 25A PNP high-power complementary Silicon Transistor designed for general-purpose power amplifier and switching applications.
● Low collector-emitter saturation voltage (1VDC maximum VCE(sat) @ 15A DC IC)
● Low leakage current (1mA DC maximum ICEX @ rated voltage)
● Excellent DC current gain (20 minimum hFE @ 10A DC IC)
ON Semiconductor
6 Pages / 0.09 MByte
ON Semiconductor
1 Pages / 0.12 MByte
ON Semiconductor
1 Pages / 0.03 MByte
ON Semiconductor
1 Pages / 0.13 MByte
NTE Electronics
NTE ELECTRONICS 2N5884 TRANSISTOR PNP SILICON 80V, IC-25A TO-3 CASE HIGH POWER AMPLIFIER APPLICATIONS COMP TO 2N5886
Multicomp
MULTICOMP 2N5884 Bipolar (BJT) Single Transistor, PNP, 80V, 4MHz, 200W, 25A, 100 hFE
SPC
Bipolar Transistor, Pnp, -80V, To-3
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