| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 160 V |
| Current Rating | 600 mA |
| Case/Package | TO-92 |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 160 V |
| Continuous Collector Current | 0.6A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
The 2N5551G is a small signal high voltage NPN silicon Bipolar Transistor, designed for general purpose switching applications.
● 200°C/W Junction-to-ambient thermal resistance
● 83.3°C/W Junction-to-case thermal resistance
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