TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -150 V |
Current Rating | -600 mA |
Case/Package | TO-92 |
Polarity | PNP, P-Channel |
Power Dissipation | 625 mW |
Breakdown Voltage (Collector to Emitter) | -150 V |
Continuous Collector Current | 0.6A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
The 2N5401G is a PNP silicon amplifier Bipolar Transistor, 150VDC collector-emitter voltage, 160VDC collector-base voltage and 600mADC collector current-continuous. Designed for medium power applications.
● 200°C/W Junction-to-ambient thermal resistance
● 83.3°C/W Junction-to-case thermal resistance
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