| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-18 |
| Drain to Source Resistance (on) (Rds) | 60.0 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.80 W |
| Drain to Source Voltage (Vds) | 40.0 V |
| Breakdown Voltage (Gate to Source) | 40.0 V |
| Continuous Drain Current (Ids) | 100 pA |
Because of its uni-polar voltage control characteristics, the 2N4392 JFET transistor from Central Semiconductor is perfect for preventing a voltage drop in your circuit. Its maximum power dissipation is 1800 mW. It is made in a single configuration. This junction field effect transistor has a minimum operating temperature of -65 °C and a maximum of 175 °C.
Central Semiconductor
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